Foxconn Electronics, (the registered trade name of Hon Hai Precision Industry), held the ground breaking ceremony yesterday for its new R&D center in Tucheng, northern Taiwan. The company will use the center to develop nanotechnology.
The company will inject NT$12 billion over the next three years to build the center, which will have a total floor space of 6,284 square meters, Foxconn chairman Terry Guo stated at the ceremony.
The new R&D center will hire more than 1,000 R&D staff members by the time the first phase of construction is completed in July 2005. The staff will expand to 3,000 when the second phase is completed one year later, Guo added.
The new center will initially focus on the research and development of nanotechnology used for molds and machinery, thermal technology, batteries, monitors and optoelectronics solutions, Guo noted.
In addition to Taiwan, Foxconn currently operates R&D centers in China, Japan, Finland, Denmark and North America. The group as a whole is expected to spend NT$66 billion (about US$1.94 billion) on R&D projects this year, according to other sources at Foxconn.
Foxconn has secured 12,000 patent rights on more than 17,000 patent applications worldwide, Guo said.
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